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Langmuir

Langmuir

IF: 3.7
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Role of Poly(diallyldimethylammonium chloride) in Selective Polishing of Polysilicon over Silicon Dioxide and Silicon Nitride Films

Published:28 February 2011 DOI: 10.1021/la104257k PMID: 21355593
Naresh K. Penta, P. R. Dandu Veera, S. V. Babu*

Abstract

A cationic polymer, poly(diallyldimethylammonium chloride), or PDADMAC (MW ≈ 200?000), at a concentration of 250 ppm was used to enhance polysilicon removal rates (RRs) to ~600 nm/min while simultaneously suppressing both silicon dioxide and silicon nitride RRs to <1 nm/min, both in the absence or in the presence of ceria or silica abrasives during chemical mechanical polishing (CMP). These results suggest that aqueous abrasive-free solutions of PDADMAC are very attractive candidates for several front-end-of-line (FEOL) CMP processes. Possible mechanisms for the enhancement of poly-Si RR and the suppression of oxide and nitride RRs are proposed on the basis of the RRs, contact angle data on poly-Si films, zeta potentials of polishing pads, polysilicon films, silicon nitride particles, and silica and ceria abrasives, thermogravimetric analysis, and UV?vis spectroscopy data.

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Related products
Procduct Name CAS Molecular Formula Supplier Price
Quartz 14808-60-7 O2Si 624 suppliers $10.00-$6975.05
Cerium dioxide 1306-38-3 CeO2 452 suppliers $26.00-$1565.00
Poly(diallyldimethylammonium chloride) 26062-79-3 C24H54Cl3N3X2 310 suppliers $25.00-$187.00

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