Dinatrium-4,4'-(1,10-phenanthrolin-4,7-diyl)bis(benzolsulfonat) Chemische Eigenschaften,Einsatz,Produktion Methoden
R-S?tze Betriebsanweisung:
R36/38:Reizt die Augen und die Haut.
R36/37/38:Reizt die Augen, die Atmungsorgane und die Haut.
S-S?tze Betriebsanweisung:
S26:Bei Berührung mit den Augen sofort gründlich mit Wasser abspülen und Arzt konsultieren.
S36:DE: Bei der Arbeit geeignete Schutzkleidung tragen.
S24/25:Berührung mit den Augen und der Haut vermeiden.
S37/39:Bei der Arbeit geeignete Schutzhandschuhe und Schutzbrille/Gesichtsschutz tragen.
Verwenden
Used for pretreatment of planar silicon devices when plating with Nickel plating solution products 44069 and 44070.
Allgemeine Beschreibung
Improved HF Buffer System with stabilized HF activity - selective solvent for SiO2 used in semiconductor technology of planar passivated devices - transistors, integrated circuits, diodes, rectifiers, SCR, MOS, FET
Advantages:
- Ready-to-use - Economical
- HF activity buffer stabilized
- Excellent process reproducibility
- Does not undercut masked oxide
- Will not stain diffused silicon surfaces
- Avoids contamination on silicon surfaces
- Photoresist coating unaffected
Buffer HF improved is an idealized buffer preparation characterized by a high buffer index and an optimized, uniform oxide-etch rate. The composition of buffer HF improved is precisely controlled by HF activity measurements and electrometric pH. The mass balance corresponds essentially to (HF) + (F) + 2(HF
2) for a two-ligand mononuclear complex and the charge balance is (H
+) - (F) + (HF
2- ). The HF activity is maintained constant through the specific equilibrium constant which regulates the equilibrium reaction between fluoride, bifluoride, and HF buffer components. A second equilibrium constant participates in the regulation of the hydronium in concentration of pH.
Buffer HF improved is produced and analyzed to be essentially free of impurities. Nitrate ions, a common impurity causing stains on diffused silicon surfaces, are specifically removed. Heavy metal impurities, which can lead to degradation of device characteristics, are rigidly controlled under manufacturing process specifications.
Dinatrium-4,4'-(1,10-phenanthrolin-4,7-diyl)bis(benzolsulfonat) Upstream-Materialien And Downstream Produkte
Upstream-Materialien
Downstream Produkte