Buffered oxide etchant (BOE) 10:1 Chemische Eigenschaften,Einsatz,Produktion Methoden

Verwenden

Buffered oxide etchant (BOE) 10:1 can be used in the etching of titanium carbide, which can be used in microelectromechanical systems (MEMS). It can also be used in the etching of spin-on-dopant (SOD) for the development of conductor-insulator-conductor tunneling diodes. It can also be used to enhance the surface of fused quartz devices.

Allgemeine Beschreibung

Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO₂) or silicon nitride (Si₃N₄). It is a mixture of a buffering agent, such as ammonium fluoride (NH₄F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.

Buffered oxide etchant (BOE) 10:1 Upstream-Materialien And Downstream Produkte

Upstream-Materialien

Downstream Produkte

Buffered oxide etchant (BOE) 10:1 Anbieter Lieferant Produzent Hersteller Vertrieb H?ndler.

Firmenname	Telefon	E-Mail	Land	Produktkatalog	Edge Rate
Sigma-Aldrich	021-61415566 800-8193336	orderCN@merckgroup.com	China	51456	80
Shanghai Aladdin Biochemical Technology Co.,Ltd.	+86-18521732826	market@aladdin-e.com	China	48461	58

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• Buffered oxide etchant (BOE) 10:1