R20/22:Gesundheitssch?dlich beim Einatmen und Verschlucken. R51/53:Giftig für Wasserorganismen, kann in Gew?ssern l?ngerfristig sch?dliche Wirkungen haben.
S-S?tze Betriebsanweisung:
S61:Freisetzung in die Umwelt vermeiden. Besondere Anweisungen einholen/Sicherheitsdatenblatt zu Rate ziehen.
Chemische Eigenschaften
Crystalline solid.
Physikalische Eigenschaften
Black cubic crystal; zincblende structure; density 5.775 g/cm3; melts at525°C; density of melt 6.48 g/mL; dielectric constant 15.9; insoluble in water.
Verwenden
In semiconductor electronics. Grown p-n junctions(Indium(III) antimonide) have been made by doping a melt with an acceptor impurity such as zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions have also been made. Broad-area surface junctions have been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, producing a p-n junction just inside the surface. Also has photoconductive, photoelectromagnetic, and magnetoresistive properties. Useful as an infrared detector and filter, and in Hall effect devices.
synthetische
Indium antimonide may be synthesized from its elements by fusion of sto-ichiometric amounts of indium and antimony at elevated temperatures in anevacuated, sealed ampule.
Vorbereitung Methode
Intermetallic semiconductors of indium are formed from
group III and group V elements, requiring very high purity
of the elements (0.1 ppm).
Allgemeine Beschreibung
This product has been enhanced for energy efficiency.
Hazard
See indium; antimony.
Structure and conformation
The space lattice of InSb belongs to the cubic system and zinc-blende-type structure called InSb-I
at room temperature and under atmospheric pressure has a lattice constant of a=0.64789 nm and
In–Sb=0.280 nm. A single crystal has cleavage of (110) plane. It transforms to white tin-type
InSb-II at high temperatures and under high pressure.
Indiumantimonid Upstream-Materialien And Downstream Produkte