| Identification | More | [Name]
INDIUM ANTIMONIDE | [CAS]
1312-41-0 | [Synonyms]
INDIUM ANTIMONIDE
antimonycompd.withindium(1:1)
indiumcompd.withantimony(1:1)
Indium antimonide (99.99%-In) PURATREM
Indiumantimonideblackxtl
indium stibide
INDIUM ANTIMONIDE, 99.99+%
Indium antimonide, 99.5%
INDIUM ANTIMONIDE, 99.999%
indium antimonide, electronic grade
Antimony-indium
Indium antimonide, Electronic Grade, 99.99% (metals basis)
Indium antimonide, 99.999% (metals basis)
InSb wafer: P-Type, (211)+/-1°: Resist.8-18 Ohm cm: cc:4-9 x1013ücm-3ü (77K): 1 side polished: dia 18-30mmx0,7mm thick
Stibinetriylindium(III) | [EINECS(EC#)]
215-192-3 | [Molecular Formula]
InSb | [MDL Number]
MFCD00016146 | [Molecular Weight]
236.58 | [MOL File]
1312-41-0.mol |
| Safety Data | Back Directory | [Hazard Codes ]
Xn,N | [Risk Statements ]
R20/22:Harmful by inhalation and if swallowed .
R51/53:Toxic to aquatic organisms, may cause long-term adverse effects in the aquatic environment . | [Safety Statements ]
S61:Avoid release to the environment. Refer to special instructions safety data sheet . | [RIDADR ]
UN 1549 6.1/PG 3
| [WGK Germany ]
2
| [RTECS ]
NL1105000
| [TSCA ]
Yes | [HazardClass ]
6.1 | [PackingGroup ]
III | [HS Code ]
2853909090 |
| Hazard Information | Back Directory | [Hazard]
See indium; antimony. | [Chemical Properties]
Crystalline solid. | [Physical properties]
Black cubic crystal; zincblende structure; density 5.775 g/cm3; melts at525°C; density of melt 6.48 g/mL; dielectric constant 15.9; insoluble in water. | [Uses]
Crystal structure: Zinc blende structure, cubic | [Uses]
In semiconductor electronics. Grown p-n junctions(Indium(III) antimonide) have been made by doping a melt with an acceptor impurity such as zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions have also been made. Broad-area surface junctions have been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, producing a p-n junction just inside the surface. Also has photoconductive, photoelectromagnetic, and magnetoresistive properties. Useful as an infrared detector and filter, and in Hall effect devices.
| [Uses]
Indium antimonide finds use in infrared detectors, including FLIR systems, thermal imaging cameras, infrared astronomy and in infrared homing missile guidance systems, in fast transistors. It is used in thermal image detectors using photo-electromagnetic detectors or photodiodes. | [Preparation]
Indium antimonide may be synthesized from its elements by fusion of sto-ichiometric amounts of indium and antimony at elevated temperatures in anevacuated, sealed ampule. | [Production Methods]
Intermetallic semiconductors of indium are formed from
group III and group V elements, requiring very high purity
of the elements (0.1 ppm). | [General Description]
We are committed to bringing you Greener Alternative Products, which adhere to one or more of The 12 Principles of Greener Chemistry. This product has been enhanced for energy efficiency. Find details here. | [Structure and conformation]
The space lattice of InSb belongs to the cubic system and zinc-blende-type structure called InSb-I
at room temperature and under atmospheric pressure has a lattice constant of a=0.64789 nm and
In–Sb=0.280 nm. A single crystal has cleavage of (110) plane. It transforms to white tin-type
InSb-II at high temperatures and under high pressure. |
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