Black Silicon Carbide Introduction

Because of the rarity of natural moissanite, most silicon carbide is synthetic. It is used as an abrasive, and more recently as a semiconductor and diamond simulant of gem quality. The simplest manufacturing process is to combine silica sand and carbon in an Acheson graphite electric resistance furnace at a high temperature, between 1,600 °C (2,910 °F) and 2,500 °C (4,530 °F). Fine SiO2 particles in plant material (e.g. rice husks) can be converted to SiC by heating in the excess carbon from the organic material. The silica fume, which is a byproduct of producing silicon metal and ferrosilicon alloys, also can be converted to SiC by heating with graphite at 1,500 °C (2,730 °F).
Green silicon carbide
Green silicon carbide is made of quartz sand and petroleum coke through high-temperature melting. The production method is basically the same as that of black silicon carbide, but the requirements for raw materials are different. The smelted crystals have high purity, high hardness and strong cutting force, and are suitable for processing hard and brittle materials. Green silicon carbide is suitable for grinding hard alloys, hard and brittle metals and non-metallic materials, such as non-ferrous metals such as copper, brass, aluminum and magnesium, and non-metallic materials such as precious stones, optical glass and ceramics.