Identification | Back Directory | [Name]
TETRAKIS(TRIMETHYLSILOXY)SILANE | [CAS]
3555-47-3 | [Synonyms]
TETRAKIS(TRIMETHYLSILOXY)SILANE etrakis(trimethylsilyl)silicate TETRAKIS(TRIMETHYLSILYLOXY)SILANE Tetrakis(trimethylsilyl) silicate Tetrakis-(trimethylsilyloxy)-silan Tetrakis(trimethylsiloxy)silane, 98+% Tetrakis(trimethylsilyloxy)silane,98% Tetrakis(trimethylsilyl) orthosilicate Silicic acid tetrakis(trimethylsilyl) ester Silicic acid (H4SiO4) tetrakis(trimethylsilyl) ester Trimethylsilanol tetraester with silicic acid (H4SiO4) 1,1,1,5,5,5-hexamethyl-3,3-bis(trimethylsiloxy)-Trisiloxane 1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]trisiloxane 1,1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]-trisiloxan 1,1,1,5,5,5-hexamethyl-3,3-bis-trimethylsilanyloxy-trisiloxane 1,1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]-Trisiloxane 1,1,1,5,5,5-hexamethyl-3,3-bis-(trimethylsilanyloxy)-trisiloxane Trisiloxane,1,1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]- 1,1,1,5,5,5-Hexamethyl-3,3-bis(trimethylsiloxy)pentanetrisiloxane 1,1,1,5,5,5-Hexamethyl-3,3-bis(trimethylsilyloxy)pentanetrisiloxane 1,1,1,5,5,5-Hexamethyl-3,3-bis[(trimethylsilyl)oxy]pentanetrisiloxane | [EINECS(EC#)]
222-613-4 | [Molecular Formula]
C12H36O4Si5 | [MDL Number]
MFCD00051587 | [MOL File]
3555-47-3.mol | [Molecular Weight]
384.84 |
Chemical Properties | Back Directory | [Melting point ]
-60 °C
| [Boiling point ]
103-106 °C2 mm Hg(lit.)
| [density ]
0.87 g/mL at 25 °C(lit.)
| [vapor pressure ]
27.4hPa at 20℃ | [refractive index ]
n20/D 1.389(lit.)
| [Fp ]
169 °F
| [storage temp. ]
Inert atmosphere,Room Temperature | [form ]
liquid | [color ]
Colorless to Almost colorless | [Specific Gravity]
0.868 | [Water Solubility ]
150.7ng/L at 23℃ | [Hydrolytic Sensitivity]
4: no reaction with water under neutral conditions | [BRN ]
1793898 | [LogP]
9 at 25℃ | [EPA Substance Registry System]
Tetrakis(trimethylsiloxy)silane (3555-47-3) |
Hazard Information | Back Directory | [Chemical Properties]
Colorless liquid | [Uses]
Tetrakis(trimethylsilyloxy)silane (TTMS) is an organosilicon compound used as a precursor to prepare nanostructured organosilicon polymer films by plasma-enhanced chemical vapor deposition (PECVD) at atmospheric pressure. TTMS along with cyclohexane can also be used to synthesize low dielectric constant SiCOH films by PECVD method. | [Flammability and Explosibility]
Notclassified |
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